Hafnium-based High-k Gate Dielectrics

16 Hafnium - based High - k Gate Dielectrics

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

Electrical and Material Characteristics of Hafnium-based Multi-metal High-k Gate Dielectrics for Future Scaled CMOS Technology: Physics, Reliability, and Process Development

Novel Hafnium-Based Compound Metal Oxide Gate Dielectrics for Advanced CMOS Technology

Abstract: Improvement of Hf-based high-k gate dielectrics by incorporating Ta and La in HfO2 are investigated systematically. The main issues of pure HfO2 gate dielectric, including low crystallization temperature, channel mobility degradation, and bias temperature instability (BTI) degradation, can be effectively improved in HfTaO and HfLaO. Particularly, HfLaO with appropriate metal gate mate...

Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k gate stacks and, therefore, their origins and properties are of great interest. In this paper, reported experimental and theoretical results related to oxygen defects in HfO2 gate dielectrics are reviewed critically to assess the relative importance of different defect species in terms of their ele...

Development of High-k Gates for Advances CMOS Devices

Development of High-k Gates for Advances CMOS Devices High dielectric constant (high-k) materials, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), alumina (Al2O3), and their silicates, have drawn a great deal of attention in recent years for potential use as gate dielectrics in advanced CMOS processes [1]. With high dielectric constants, gate dieletrics can be made thicker than SiO2 while...